Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's

Abstract

Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the main reason for the experimental observation. Comparison of two band model with experiment provides an upper limit for the electron-electron scattering time ${\tau }_{ee}$ in the dilute 2D electron system as a function of electron density $n_s$. The time ${\tau }_{ee}$ increases gradually with $n_s$, becoming much greater than the transport scattering time ${\tau }_p$ for densities $n_s>4\times 10^{11}$ cm${}^{-2}$. Strong electron-electron scattering is found for $1.22\times 10^{11}<n_s<3\times 10^{11}$ cm${}^{-2}$, the region which is near to the apparent metal insulator transition.

5 pages, 4 figures

References in corpus (2)

• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
• Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle

Cited by in corpus (7)

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• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
• Positive Quantum Magnetoresistance in Tilted Magnetic Field
• Hall coefficient and magnetoresistance of 2D spin-polarized electron systems
• Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure