Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure
arXiv:0909.1611 · doi:10.1103/PhysRevB.80.121307
Abstract
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit non-monotonic dependence on the magnetic field.
arXiv comment4 pages, 4 figures, accepted in Phys. Rev. B
References in corpus (14)
- Rashba spin splitting in two-dimensional electron and hole systems
- Magnetic Field Suppression of the Conducting Phase in Two Dimensions
- Spin Degree of Freedom in a Two-Dimensional Electron Liquid
- Anomalous Hall effect in paramagnetic two dimensional systems
- Anomalous Rashba spin splitting in two-dimensional hole systems
- Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
- In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
- Anomalous Hall effect in a two-dimensional electron gas
- Interaction Corrections to Two-Dimensional Hole Transport in Large Limit
- Interaction corrections to the Hall coefficient at intermediate temperatures
- Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect
- Anomalous Hall effect in a two dimensional electron gas with magnetic impurities
- A Tunable Anomalous Hall Effect in a Non-Ferromagnetic System
- Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's