Spin injection and accumulation in inhomogeneous semiconductors
arXiv:cond-mat/0507427 · doi:10.1016/j.physe.2005.12.152
Abstract
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.
arXiv comment4 pages
References in corpus (4)
- Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions
- Spin diffusion and injection in semiconductor structures: Electric field effects
- Electric-field dependent spin diffusion and spin injection into semiconductors
- Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping