Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers

Abstract

Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift diffusion model is used to relate the magnitude of the measured spin-orbit splitting to the amount of strain in the sample.

4 pages, 5 figures

References in corpus (2)

• Current induced electron spin polarization in strained semiconductors
• Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel

Cited by in corpus (5)

• Current-Induced Polarization and the Spin Hall Effect at Room Temperature
• Mapping spin-orbit splitting in strained InGaAs epilayers
• Strain-assisted spin manipulating and the discerption of strain-induced spin splitting
• Spin elastodynamic motive force
• Trembling motion of electrons driven by Larmor spin precession