Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers
arXiv:cond-mat/0603775 · doi:10.1103/PhysRevB.73.241316
Abstract
Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift diffusion model is used to relate the magnitude of the measured spin-orbit splitting to the amount of strain in the sample.
arXiv comment4 pages, 5 figures
References in corpus (6)
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Cited by in corpus (9)
- Spin dynamics in semiconductors
- Current-Induced Polarization and the Spin Hall Effect at Room Temperature
- Theory of strain in single-layer transition metal dichalcogenides
- Mapping spin-orbit splitting in strained InGaAs epilayers
- Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain
- Role of Strain on the Coherent Properties of GaAs Excitons and Biexcitons
- Strain-assisted spin manipulating and the discerption of strain-induced spin splitting
- Spin elastodynamic motive force
- Trembling motion of electrons driven by Larmor spin precession