Spatial Imaging and Mechanical Control of Spin Coherence in Strained GaAs Epilayers

Abstract

The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically-detected nuclear magnetic resonance spectroscopies. The bandgap, electron spin lifetime, electron g-factor, and nuclear quadrupole splitting are simultaneously imaged over millimeter scale areas of the epilayers for continuously varying values of strain. All-optical nuclear magnetic resonance techniques allow access to the strain induced nuclear quadrupolar resonance splitting in field regimes not easily addressable using conventional optically-detected nuclear magnetic resonance.

11 pages, 3 figures

References in corpus (4)

• Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields
• Optical manipulation of nuclear spin by a two-dimensional electron gas
• Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells
• High-field optically detected nuclear magnetic resonance in GaAs

Cited by in corpus (7)

• Spin dynamics in semiconductors
• Suppression of Spin Relaxation in Submicron InGaAs Wires
• Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers
• Role of Strain on the Coherent Properties of GaAs Excitons and Biexcitons
• Strain-induced enhancement of electric quadrupole splitting in resistively detected nuclear magnetic resonance spectrum in quantum Hall systems
• On the impact of strain on the electronic properties of InAs/GaSb quantum well systems
• Strain-assisted spin manipulating and the discerption of strain-induced spin splitting