Mapping spin-orbit splitting in strained InGaAs epilayers
arXiv:1006.5685 · doi:10.1103/PhysRevB.82.081304
Abstract
Time- and spatially-resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are lattice-matched to the GaAs substrate and designed to reduce inhomogeneous effects related to strain relaxation. Measurements of momentum-dependent spin splitting as a function of electron spin drift velocity along [100], [010], [110] and [10] directions enable separation of isotropic and anisotropic effective magnetic fields that arise from uniaxial and biaxial strain along 110. We relate our findings to previous measurements and theoretical predictions of spin splitting for inversion symmetry breaking in bulk strained semiconductors.
5 pages, 4 figures
References in corpus (6)
- Measurement of Rashba and Dresselhaus spin-orbit magnetic fields
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- Effects of strain, electric, and magnetic fields on lateral electron spin transport in semiconductor epilayers
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Cited by in corpus (13)
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- Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
- Unambiguous determination of spin dephasing times in ZnO
- g-Factor Modification in a Bulk InGaAs Epilayer by an In-plane Electric Field
- Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities
- Phase effects due to previous pulses in time-resolved Faraday rotation measurements
- Theory of invariants-based formulation of Hamiltonians with application to strained zinc-blende crystals
- Curvature-induced valley-dependent spin-orbit interaction