Observation of intrinsic inverse spin Hall effect

Abstract

We report observation of intrinsic inverse spin Hall effect in un-doped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time-resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between electrons and holes. The transverse charge current generated by the pure spin current via the inverse spin Hall effect is simultaneously resolved. We find that the charge current is generated well before the first electron-hole scattering event. Generation of the transverse current in the scattering-free ballistic transport regime provides unambiguous evidence for the intrinsic inverse spin Hall effect.

4 pages, 3 figures

References in corpus (10)

• Dissipationless Quantum Spin Current at Room Temperature
• Direct electronic measurement of the spin Hall effect
• Spin current and polarization in impure 2D electron systems with spin-orbit coupling
• Theory of Spin Hall conductivity in n-doped GaAs
• Current-Induced Polarization and the Spin Hall Effect at Room Temperature
• Can Non-Equilibrium Spin Hall Accumulation be Induced in Ballistic Nanostructures?
• Resonant Spin Hall Conductance in Two-Dimensional Electron Systems with Rashba Interaction in a Perpendicular Magnetic Field
• Dissipation effects in spin-Hall transport of electrons and holes
• Ultrafast extrinsic spin-Hall currents
• All-optical generation and detection of sub-picosecond ac spin current pulses in GaAs