Inverse Edelstein effect of the surface states of a topological insulator

Abstract

The surface states of three-dimensional topological insulators posses the unique property of spin-momentum interlocking. This property gives rise to the interesting inverse Edelstein effect (IEE), in which an applied spin bias $\mu$ is converted to a measurable charge voltage difference $V$. We develop a semiclassical theory for the IEE of the surface states of ${\text{Bi}}_2{\text{Se}}_3$ thin films, which is applicable from the ballistic regime to diffusive regime. We find that the IEE efficiency ratio $\gamma =V/\mu$ exhibits universal dependence on sample size, and approaches $\pi /4$ in the ballistic limit and $1$ in the diffusive limit.

4 pages, 4 figures

References in corpus (11)

• Topological Field Theory of Time-Reversal Invariant Insulators
• Direct electronic measurement of the spin Hall effect
• Topological Kondo Insulators
• Scaling behavior of the spin pumping effect in ferromagnet/platinum bilayers
• Ultrafast surface carrier dynamics in the topological insulator Bi2Te3
• Perspectives for Spintronics in 2D Materials
• Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
• Observation of intrinsic inverse spin Hall effect
• Spin-Charge Locking and Tunneling into a Helical Metal
• Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6
• Unified Theoretical Approach to Electronic Transport from Diffusive to Ballistic Regimes

Cited by in corpus (5)

• Orbital pseudospin-momentum locking in two-dimensional chiral borophene
• Edelstein and inverse Edelstein effects caused by the pristine surface states of topological insulators
• Edelstein Effect in Isotropic and Anisotropic Rashba Models
• Entropy Driven Inductive Response of Topological Insulators
• Boltzmann theory of the inverse Edelstein effect in a two-dimensional Rashba gas