activity
20142022
most citedSwitching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

349 citations · 831 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2022★ 59 cited

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet FeGaTe with highly spin-polarized Fermi surfaces

Xinlu Li, Meng Zhu, Yaoyuan Wang +5

Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW mate…

cond-mat.mtrl-sci2022

Nanoscale three-dimensional magnetic sensing with a probabilistic nanomagnet driven by spin-orbit torque

Shuai Zhang, Shihao Li, Zhe Guo +9

Detection of vector magnetic fields at nanoscale dimensions is critical in applications ranging from basic material science, to medical diagnostic. Meanwhile, an all-electric opera…

cond-mat.mtrl-sci2022★ 3 cited

Chaotic spin precession in antiferromagnetic domain walls

Yangyi Chen, Xu Ge, Wei Luo +4

In contrast with rich investigations about the translation of an antiferromagnetic (AFM) texture, spin precession in an AFM texture is seldom concerned for lacking an effective dri…

cond-mat.mes-hall2021

Mass-energy equivalence for terahertz magnon excitation in antiferromagnetic domain walls

Xu Ge, Fa Chen, Zaidong Li +7

The theory of special relativity is one of the most significant achievements in modern physics, with several important predictions such as time dilation, size contraction for a mov…

cond-mat.mes-hall2020★ 136 cited

Van der Waals Multiferroic Tunnel Junctions

Yurong Su, Xinlu Li, Meng Zhu +3

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing…

physics.app-ph2020★ 9 cited

Voltage-Induced Inertial Domain Wall Motion in an Antiferromagnetic Nanowire

Fa Chen, Zhendong Zhang, Wei Luo +3

Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced…

cond-mat.mes-hall2019★ 11 cited

Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction

Yurong Su, Jia Zhang, Jing-Tao Lü +2

Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresist…

cond-mat.mtrl-sci2019★ 194 cited

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Xinlu Li, Evgeny Y. Tsymbal, Jing-Tao Lü +3

Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especiall…

physics.comp-ph2018

The reason for the tilting of domain wall with Dzyaloshinskii-Moriya interaction from a microscopic dynamical perspective

Maokang Shen, Yue Zhang, Wei Luo +2

The interfacial Dzyaloshinskii-Moriya interaction (DMI) of a heavy metal (HM)/ferromagnetic (FM) metal heterostructure is vital to the current-induced domain wall motion (CIDWM) at…

physics.comp-ph2018

The high-frequency dynamics of domain walls with strong Dzyaloshinskii-Moriya interaction

Yue Zhang, Mao-Kang Shen, Zai-Dong Li +2

Domain walls (DWs) in perpendicularly magnetized nanotracks (PMNTs) with interfacial Dzyaloshinskii-Moriya interaction (DMI) have become the primary objects of theoretical and expe…

physics.comp-ph2018★ 8 cited

Readable Racetrack Memory via Ferromagnetically Coupled Chiral Domain Walls

Maokang Shen, Yue Zhang, Long You +1

Current-induced motion of domain walls (CIMDW) with interfacial Dzyaloshinskii-Moriya interaction (DMI) in heavy metal (HM)/ferromagnetic (FM) metal multilayers have attracted atte…

physics.app-ph2017★ 53 cited

Non Volatile MoS Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

Zhongyuan Lu, Claudy Serrao, Asif Islam Khan +6

We demonstrate non-volatile, n-type, back-gated, MoS transistors, placed directly on an epitaxial grown, single crystalline, PbZrTiO (PZT) ferroelectric…

cond-mat.mes-hall2014

Negative Capacitance in a Ferroelectric Capacitor

Asif Islam Khan, Korok Chatterjee, Brian Wang +6

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacita…

cond-mat.mtrl-sci2014★ 349 cited

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

Long You, OukJae Lee, Debanjan Bhowmik +4

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-pl…

cond-mat.mtrl-sci2014★ 9 cited

Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque

Debanjan Bhowmik, Mark E. Nowakowski, Long You +5

Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multil…