136 citations · 147 across the 3 of their papers we have counts for
7 papers
Van der Waals Multiferroic Tunnel Junctions
Yurong Su, Xinlu Li, Meng Zhu +3
Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing…
Voltage-Induced Inertial Domain Wall Motion in an Antiferromagnetic Nanowire
Fa Chen, Zhendong Zhang, Wei Luo +3
Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced…
Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction
Yurong Su, Jia Zhang, Jing-Tao Lü +2
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresist…
Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes
Xinlu Li, Evgeny Y. Tsymbal, Jing-Tao Lü +3
Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especiall…
The reason for the tilting of domain wall with Dzyaloshinskii-Moriya interaction from a microscopic dynamical perspective
Maokang Shen, Yue Zhang, Wei Luo +2
The interfacial Dzyaloshinskii-Moriya interaction (DMI) of a heavy metal (HM)/ferromagnetic (FM) metal heterostructure is vital to the current-induced domain wall motion (CIDWM) at…
The high-frequency dynamics of domain walls with strong Dzyaloshinskii-Moriya interaction
Yue Zhang, Mao-Kang Shen, Zai-Dong Li +2
Domain walls (DWs) in perpendicularly magnetized nanotracks (PMNTs) with interfacial Dzyaloshinskii-Moriya interaction (DMI) have become the primary objects of theoretical and expe…