Highly Efficient Room-Temperature Nonvolatile Magnetic Switching by Current in Fe3GaTe2 Thin Flakes

Abstract

Effectively tuning magnetic state by using current is essential for novel spintronic devices. Magnetic van der Waals (vdW) materials have shown superior properties for the applications of magnetic information storage based on the efficient spin torque effect. However, for most of known vdW ferromagnets, the ferromagnetic transition temperatures lower than room temperature strongly impede their applications and the room-temperature vdW spintronic device with low energy consumption is still a long-sought goal. Here, we realize the highly efficient room-temperature nonvolatile magnetic switching by current in a single-material device based on vdW ferromagnet Fe3GaTe2. Moreover, the switching current density and power dissipation are about 300 and 60000 times smaller than conventional spin-orbit-torque devices of magnet/heavy-metal heterostructures. These findings make an important progress on the applications of magnetic vdW materials in the fields of spintronics and magnetic information storage.

18 pages, 5 figures

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Cited by in corpus (4)

• All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2
• Magnetoelectric effect in van der Waals magnets
• Artificially creating emergent interfacial antiferromagnetism and its manipulation in a magnetic van-der-Waals heterostructure
• Edge non-collinear magnetism in nanoribbons of Fe3GeTe2 and Fe3GaTe2