All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2

Abstract

Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two-dimensionality, enabling much smaller devices of novel concepts. One particular exciting direction lies in the current-driven spin-orbit torque (SOT). Here, we, for the first time, realize an all vdW three-terminal SOT memory, employing the unique physics principle of gigantic intrinsic SOT of Fe3GeTe2 (FGT) and the well-known industry-adopted tunnelling magnetoresistance (TMR) effect. We designed the device operation procedure and fabricated the FGT/h-BN/FGT vdW heterostructure as a proof of concept. This device exhibits a classical TMR effect and unambiguously demonstrates the conception by precise performance as expected: the magnetic information of the top-FGT is written by current-driven SOT and read out by TMR separately. The writing and reading current paths are physically decoupled, enhancing the design and optimization flexibility substantially and further strengthening the device's endurance naturally. Our work would prompt more expansive use of vdW magnets for spintronic applications.

Accepted by Advanced Electronic Materials; 26 pages, 4 main figures, 3 supporting figures

References in corpus (22)

• 2D materials and van der Waals heterostructures
• Ising-Type Magnetic Ordering in Atomically Thin FePS3
• Suppression of magnetic ordering in XXZ-type antiferromagnetic monolayer NiPS3
• Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2
• Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers
• Large anomalous Nernst effect in a van der Waals ferromagnet Fe${}_3$GeTe${}_2$
• Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe${}_3$GeTe${}_2$ Nanoflakes
• Current Control of Magnetism in Two-Dimensional Fe3GeTe2
• Gigantic current control of coercive field and magnetic memory based on nm-thin ferromagnetic van der Waals Fe3GeTe2
• Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices
• Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions
• Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure
• Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures
• Orbit-transfer torque driven field-free switching of perpendicular magnetization
• Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2
• Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
• Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
• Broken inversion symmetry in van der Waals topological ferromagnetic metal iron germanium telluride
• Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe${}_3$GaTe${}_2$
• Highly Efficient Room-Temperature Nonvolatile Magnetic Switching by Current in Fe3GaTe2 Thin Flakes
• Imaging current control of magnetization in Fe${}_3$GeTe${}_2$ with a widefield nitrogen-vacancy microscope
• Hidden interplay of current-induced spin and orbital torques in bulk Fe${}_3$GeTe${}_2$

Cited by in corpus (5)

• Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure
• Roadmap on Quantum Magnetic Materials
• Magnetoelectric effect in van der Waals magnets
• Electrical control of topological 3Q state in intercalated van der Waals antiferromagnet Cox-TaS2
• Artificially creating emergent interfacial antiferromagnetism and its manipulation in a magnetic van-der-Waals heterostructure