Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure
arXiv:2501.04235 · doi:10.1002/adma.202412037
Abstract
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, we demonstrate a new approach for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe3GeTe2/SrTiO3 heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane initialization magnetic fields with clear hysteresis. We successfully combined van-der-Waals magnet and oxide for the first time, especially taking advantage of spin-orbit torque on the SrTiO3 oxide. This allows us to establish a new way of magnetic field-free switching. Our work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van-der-Waals magnets and oxide spintronics.
Accepted by Advanced Materials (2025); 47 pages, 4 main figures, 16 supporting figures
References in corpus (11)
- Magnetic 2D materials and heterostructures
- Ising-Type Magnetic Ordering in Atomically Thin FePS3
- Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2
- Determination of intrinsic spin Hall angle in Pt
- Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
- Gigantic current control of coercive field and magnetic memory based on nm-thin ferromagnetic van der Waals Fe3GeTe2
- Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2
- Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
- Broken inversion symmetry in van der Waals topological ferromagnetic metal iron germanium telluride
- All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2
- Unexpected versatile electrical transport behaviors of ferromagnetic nickel films