Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe${}_3$GeTe${}_2$ Nanoflakes

Abstract

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe${}_3$GeTe${}_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (Vg>4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.

Published on 22 July 2020 in Physical Review Letters

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Cited by in corpus (22)

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• Strong magneto-optical and anomalous transport manifestations in two-dimensional van der Waals magnets Fe${}_n$GeTe${}_2$ ($n$ = 3, 4, 5)
• Electrically controlled superconductor-insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes
• Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures
• Exchange bias in molecule/Fe3GeTe2 van der Waals heterostructures via spinterface effects
• Neutron spectroscopy evidence on the dual nature of magnetic excitations in a van der Waals metallic ferromagnet Fe${}_{2.72}$GeTe${}_2$
• Strain tunability of perpendicular magnetic anisotropy in van der Waals ferromagnets VI3
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• All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2
• Antiferromagnetic fluctuations and orbital-selective Mott transition in the van der Waals ferromagnet Fe3-xGeTe2
• Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages
• Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS4
• Magnetoelectric effect in van der Waals magnets
• Mechanism of carrier doping induced magnetic phase transitions in two-dimensional materials
• Magnetic damping anisotropy in the two-dimensional van der Waals material Fe${}_3$GeTe${}_2$ from first principles
• Strain-induced interlayer magnetic coupling spike of two-dimensional van der Waals material Fe${}_5$GeTe${}_2$
• Artificially creating emergent interfacial antiferromagnetism and its manipulation in a magnetic van-der-Waals heterostructure
• Writing and detecting topological charges in exfoliated Fe${}_{5-x}$GeTe${}_2$
• Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
• Electrostatic Control of Magneto-Optic Excitonic Resonances in the van der Waals Ferromagnetic Semiconductor Cr${}_2$Ge${}_2$Te${}_6$