Strong magneto-optical and anomalous transport manifestations in two-dimensional van der Waals magnets FeGeTe ( = 3, 4, 5)
arXiv:2108.02926 · doi:10.1103/PhysRevB.104.104427
Abstract
Utilizing the first-principles calculations together with the group theory analysis, we systematically investigate the magnetocrystalline anisotropy energy, magneto-optical effect, and anomalous transport properties (including anomalous Hall, Nernst, and thermal Hall effects) of monolayer and bilayer FeGeTe ( = 3, 4, 5). The monolayer FeGeTe ( = 3, 4, 5) exhibits the out-of-plane, in-plane, and in-plane ferromagnetic orders with considerable magnetocrystalline anisotropy energies of -3.17, 4.42, and 0.58 meV/f.u., respectively. Ferromagnetic order is predicted in bilayer FeGeTe while antiferromagnetic order prefers in bilayer FeGeTe and FeGeTe. The group theory analysis reveals that in addition to monolayer ferromagnetic FeGeTe ( = 3, 4, 5), the magneto-optical and anomalous transport phenomena surprisingly exist in bilayer antiferromagnetic FeGeTe, which is much rare in realistic collinear antiferromagnets. If spin magnetic moments of monolayer and bilayer FeGeTe are reoriented from the in-plane to out-of-plane direction, the magneto-optical and anomalous transport properties enhance significantly, presenting strong magnetic anisotropy. We also demonstrate that the anomalous Hall effect decreases with the temperature increases. The gigantic anomalous Nernst and thermal Hall effects are found in monolayer and bilayer ferromagnetic FeGeTe, and the largest anomalous Nernst and thermal Hall conductivities, respectively, of -3.31 A/Km and 0.22 W/Km at 130 K are observed in bilayer ferromagnetic FeGeTe. Especially, bilayer antiferromagnetic FeGeTe exhibits large zero-temperature anomalous Hall conductivity of 2.63 e/h as well as anomalous Nernst and thermal Hall conductivities of 2.76 A/Km and 0.10 W/Km at 130 K, respectively.
arXiv comment16 page, 8 figures
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- Electrostatic Control of Magneto-Optic Excitonic Resonances in the van der Waals Ferromagnetic Semiconductor CrGeTe