Orbit-transfer torque driven field-free switching of perpendicular magnetization

Abstract

The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current density directly through the junction, while the latter requires an external magnetic field or unconventional configuration to break the symmetry. Here we propose and realize the orbit-transfer torque (OTT), that is, exerting torque on the magnetization using the orbital magnetic moments, and thus demonstrate a new strategy for current-driven PM reversal without external magnetic field. The perpendicular polarization of orbital magnetic moments is generated by a direct current in a few-layer WTe2 due to the existence of nonzero Berry curvature dipole, and the polarization direction can be switched by changing the current polarity. Guided by this principle, we construct the WTe2/Fe3GeTe2 heterostructures, where the OTT driven field-free deterministic switching of PM is achieved.

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Cited by in corpus (13)

• Control over Berry Curvature Dipole with Electric Field in WTe2
• Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
• Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
• Orbital polarization and third-order anomalous Hall effect in WTe2
• All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2
• Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
• Spin Torque Generated by Valley Hall Effect in WSe2
• Nonlinear spin and orbital Edelstein effect in WTe2
• Orbital Gravito-Magnetoelectric response and Orbital magnetic quadrupole moment correction
• Highly Tunable Perpendicular Magnetic Anisotropy and Anisotropic Magnetoresistance in Ru-doped La0.67Sr0.33MnO3 Epitaxial Films
• Enhancement of spin-orbit torque efficiency by tailoring interfacial spin-orbit coupling in Pt-based magnetic multilayers
• Facilitating field-free perpendicular magnetization switching with a Berry curvature dipole in a Weyl semimetal
• Anisotropic ultrafast spin/valley dynamics in WTe2 films