Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
arXiv:1902.05794
Abstract
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in order to utilize 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.
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Cited by in corpus (9)
- Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride
- Gate-controlled magnetic phase transition in a van der Waals magnet FeGeTe
- ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
- Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction
- Electronic structure and magnetic properties of few-layer CrGeTe: the key role of nonlocal electron-electron interaction effects
- Orbit-transfer torque driven field-free switching of perpendicular magnetization
- Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
- Strong bulk spin-orbit torques quantified in the van der Waals ferromagnet Fe3GeTe2
- Kinetically-controlled epitaxial growth of FeGeTe van der Waals ferromagnetic films