157 citations · 272 across the 8 of their papers we have counts for
8 papers
Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
Xiao Wang, Jian Tang, Xiuxin Xia +25
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in…
Magnon Valve Effect Between Two Magnetic Insulators
H. Wu, L. Huang, C. Fang +6
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relativ…
Giant tunnel magnetoresistance with a single magnetic phase-transition electrode
Jia Zhang, X. Z. Chen, C. Song +3
Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show t…
Tunneling anisotropic magnetoresistance driven by magnetic phase transition
X. Z. Chen, J. F. Feng, Z. C. Wang +16
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions w…
Spin-flip noise due to nonequilibrium spin accumulation
Liang Liu, Jiasen Niu, Huiqiang Guo +6
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electro…
Low frequency noise peak near magnon emission energy in magnetic tunnel junctions
Liang Liu, Li Xiang, Huiqiang Guo +6
We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with ma…
Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by zero bias anomaly measurements
Liang Liu, Jiasen Niu, Li Xiang +6
We provide conclusive experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI),…
Thermal transport due to quantum interference in magnetic tunnel junctions
J. F. Feng, D. P. Liu, Q. L. Ma +2
We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-i…