105 citations · 326 across the 16 of their papers we have counts for
16 papers
Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions
Wenkai Zhu, Hui Wen, Shouguo Zhu +14
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects du…
Field-free current-induced magnetization switching of a room temperature van der Waals magnet for neuromorphic computing
Chenxi Zhou, Zhe Guo, Qifeng Li +9
Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performan…
Lattice Vibration, Raman Modes and Room-Temperature Spin-Phonon Coupling in Intrinsic 2D van der Waals Ferromagnetic Fe3GaTe2
Gaojie Zhang, Hao Wu, Li Yang +4
Two-dimensional (2D) van der Waals (vdW) magnets with spin-phonon coupling are crucial for next-generation spintronics. Among them, Fe3GaTe2 has attracted widespread attention due…
Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal FeGaTe
Gaojie Zhang, Jie Yu, Hao Wu +5
Two-dimensional (2D) van der Waals (vdW) magnets are crucial for ultra-compact spintronics. However, so far, no vdW crystal has exhibited tunable above-room-temperature intrinsic f…
Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures
Lalit Pandey, Bing Zhao, Karma Tenzin +12
Van der Waals (vdW) heterostructure of two-dimensional (2D) quantum materials offers a promising platform for efficient control of magnetization dynamics for non-volatile spin-base…
Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions
Wen Jin, Xinlu Li, Gaojie Zhang +8
Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van…
Robust magnetic proximity induced anomalous Hall effect in a room temperature van der Waals ferromagnetic semiconductor based 2D heterostructure
Hao Wu, Li Yang, Gaojie Zhang +4
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with two-dimensional topological semimetals…
Giant 2D Skyrmion Topological Hall Effect with Ultrawide Temperature Window and Low-Current Manipulation in 2D Room-Temperature Ferromagnetic Crystals
Gaojie Zhang, Qingyuan Luo, Xiaokun Wen +8
The discovery and manipulation of topological Hall effect (THE), an abnormal magnetoelectric response mostly related to the Dzyaloshinskii-Moriya interaction (DMI), are promising f…
Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet FeGaTe
Gaojie Zhang, Hao Wu, Li Yang +4
Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods h…
Observation of abnormal resistance-temperature behavior along with diamagnetic transition in PbCu(PO)O-based composite
Hao Wu, Li Yang, Jie Yu +3
Recently, Sukbae Lee et al.reported that material PbCu(PO)O (LK-99) has a series of characteristics of room temperature superconductors, including diamagnetic…
Successful growth and room temperature ambient-pressure magnetic levitation of LK-99
Hao Wu, Li Yang, Bichen Xiao +1
Recently, Sukbae Lee et al. reported inspiring experimental findings on the atmospheric superconductivity of a modified lead apatite crystal (LK-99) at room temperature (10.6111/JK…
Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques
Weihao Li, Wenkai Zhu, Gaojie Zhang +10
Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic device…
Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization
Wen Jin, Gaojie Zhang, Hao Wu +3
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application…
Room-Temperature Spin-Valve Effect in FeGaTe/MoS/FeGaTe 2D van der Waals Heterojunction Devices
Wen Jin, Gaojie Zhang, Hao Wu +3
Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are hi…
Observation of the out-of-plane polarized spin current from CVD grown WTe2
Shuyuan Shi, Jie Li, Chuang-Han Hsu +11
Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric c…
Room-temperature nanoseconds spin relaxation in WTe2 and MoTe2 thin films
Qisheng Wang, Jie Li, Jean Besbas +11
The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large…