Current-induced deterministic switching of van der Waals ferromagnet at room temperature

Abstract

Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, with strong perpendicular magnetic anisotropy (PMA) and Curie temperatures exceeding room temperature, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW magnet Fe3GaTe2 using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as $J_{sw}=1.69\times 10^{6}A/c{m}^2$ at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe3GaTe2/Pt bilayer system to be ${\xi }_{DL}$ = 0.093, using second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, future spintronic devices.

References in corpus (10)

• Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2
• Maximizing Spin-Orbit Torque Generated by the Spin Hall Effect of Pt
• Current Control of Magnetism in Two-Dimensional Fe3GeTe2
• Demonstration of nanosecond operation in stochastic magnetic tunnel junctions
• Gigantic current control of coercive field and magnetic memory based on nm-thin ferromagnetic van der Waals Fe3GeTe2
• Probabilistic computing with p-bits
• Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization
• Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices
• Current-induced deterministic switching of van der Waals ferromagnet at room temperature
• Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2

Cited by in corpus (11)

• Current-induced deterministic switching of van der Waals ferromagnet at room temperature
• Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
• Momentum-Resolved Tunneling Modulation Induced Giant Multistate Resistance in Antiferroelectric Multiferroic Junction
• Stable Neel-Twisted Skyrmion Bags in a van der Waals Magnet Fe3-xGaTe2 at Room Temperature
• Above-room-temperature ferromagnetism in large-area epitaxial Fe3GaTe2/graphene van der Waals heterostructures
• Local Inversion Symmetry Breaking and Thermodynamic Evidence for Ferrimagnetism in Fe3GaTe2
• Microscopic mechanisms of Strong Electron Scattering and Giant Anomalous Hall Effect in high-Curie-temperature Fe3GaTe2 van der Waals Films
• Edge non-collinear magnetism in nanoribbons of Fe3GeTe2 and Fe3GaTe2
• Nitrogen-Vacancy Magnetometry of Edge Magnetism in WS2 Flakes
• Anisotropic electron-phonon coupling and chiral phonons in van der Waals room temperature ferromagnet Fe${}_5$GeTe${}_2$
• Spontaneous Enhancement of Dzyaloshinskii-Moriya Interaction via Field-Cooling-Induced Interface Engineering in 2D van der Waals Ferromagnetic ternary Tellurides