143 citations · 359 across the 4 of their papers we have counts for
4 papers
Selective equilibration of spin and valley polarized quantum Hall edge states in graphene
F. Amet, J. R. Wiliams, K. Watanabe +2
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining re…
Snake States in Graphene p-n Junctions
J. R. Williams, C. M. Marcus
We investigate transport in locally-gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime…
Gate-Defined Graphene Quantum Point Contact in the Quantum Hall Regime
S. Nakaharai, J. R. Williams, C. M. Marcus
We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet…
Shot Noise in Graphene
L. DiCarlo, J. R. Williams, Yiming Zhang +2
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to wit…