Boundary States in Graphene Heterojunctions

Abstract

A new type of states in graphene-based planar heterojunctions has been studied in the envelope wave function approximation. The condition for the formation of these states is the intersection between the dispersion curves of graphene and its gap modification. This type of states can also occur in smooth graphene-based heterojunctions.

5 pages, 3 figures

References in corpus (8)

• The electronic properties of graphene
• Control of graphene's properties by reversible hydrogenation
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Suspended Graphene: a bridge to the Dirac point
• Substrate-induced band gap opening in epitaxial graphene
• First direct observation of Dirac fermions in graphite
• Ab initio Study of Graphene on SiC
• Dirac fermion quantization on graphene edges: Isospin-orbit coupling, zero modes and spontaneous valley polarization

Cited by in corpus (3)

• Novel Type of Superlattices Based on Gapless Graphene with the Alternating Fermi Velocity
• Size Quantization in Planar Graphene-Based Heterostructures: Pseudospin Splitting, Interface States, and Excitons
• Diffusion on edges of insulating graphene with intravalley and intervalley scattering