Superlattice Based on Graphene on a Strip Substrate
arXiv:1208.1442 · doi:10.1134/S0021364009180143
Abstract
A graphene-based superlattice formed due to the periodic modulation of the band gap has been investigated. Such a modulation is possible in graphene deposited on a strip substrate made of silicon oxide and hexagonal boron nitride. The advantages and some possible problems in the superlattice under consideration are discussed. A model describing such a superlattice is proposed and the dispersion relation between the energy and momentum of carriers has been obtained using the transfer matrix method within this model.
6 pages, 3 figures
References in corpus (14)
- Control of graphene's properties by reversible hydrogenation
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Suspended Graphene: a bridge to the Dirac point
- Substrate-induced band gap opening in epitaxial graphene
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Ab initio Study of Graphene on SiC
- New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
- Midgap states and charge inhomogeneities in corrugated graphene
- Electron Beam Supercollimation in Graphene Superlattices
- Multiple magnetic barriers in graphene
- Superlattice Structures of Graphene based Nanoribbons
- Midgap states in corrugated graphene: Ab-initio calculations and effective field theory
- Electron optics with magnetic vector potential barriers in graphene
- Electronic superlattices in corrugated graphene