Visualizing Encapsulated Graphene, its Defects and its Charge Environment by Sub-Micrometer Resolution Electrical Imaging
arXiv:1811.05912
Abstract
Devices made from two-dimensional (2D) materials such as graphene or transition metal dichalcogenides possess interesting electronic properties that can become accessible to experimental probes when the samples are protected from deleterious environmental effects by encapsulating them between hexagonal boron nitride (hBN) layers. While the encapsulated flakes can be detected through post-processing of optical images or confocal Raman mapping, these techniques lack the sub-micrometer scale resolution to identify tears, structural defects or impurities, which is crucial for the fabrication of high-quality devices. Here we demonstrate a simple method to visualize such buried flakes with sub-micrometer resolution, by combining Kelvin force probe microscopy (KPFM) with electrostatic force microscopy (EFM). KPFM, which measures surface potential fluctuations, is extremely effective in spotting charged contaminants within and on top of the heterostructure, making it possible to distinguish contaminated regions in the buried flake. When applying a tip bias larger than the surface potential fluctuations, EFM becomes extremely efficient in highlighting encapsulated flakes and their sub-micron structural defects. We show that these imaging modes, which are standard extensions of atomic force microscopy (AFM), are perfectly suited for locating encapsulated conductors, for visualizing nanometer scale defects and bubbles, and for characterizing their local charge environment.
arXiv comment24 pages, 10 figures
References in corpus (17)
- Boron nitride substrates for high-quality graphene electronics
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Electronic transport in two dimensional graphene
- Suspended Graphene: a bridge to the Dirac point
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Observation of Van Hove singularities in twisted graphene layers
- Commensurate-incommensurate transition for graphene on hexagonal boron nitride
- Origin of Spatial Charge Inhomogeneity in Graphene
- Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
- Multicomponent fractional quantum Hall effect in graphene
- High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
- Observation of negative refraction of Dirac fermions in graphene
- Electrically tunable transverse magnetic focusing in graphene
- Visualizing Strain-induced Pseudo magnetic Fields in Graphene through an hBN Magnifying Glass
- Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels
- Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy
- Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy