Superconductivity in twisted multilayer graphene: a smoking gun in recent condensed matter physics

Abstract

In this article, we review the recent discoveries of exotic phenomena in graphene, especially superconductivity. It has been theoretically suggested for more than one decade that superconductivity may emerge in doped graphene-based materials. For single-layer graphene, there are theoretical predictions that spin-singlet $d+id$ pairing superconductivity is present when the filling is around the Dirac point. If the Fermi level is doped to the Van Hove singularity where the density of states diverges, then unconventional superconductivity with other pairing symmetry would appear. However, the experimental perspective was a bit disappointing. Despite extensive experimental efforts, superconductivity was not found in monolayer graphene. Recently, unconventional superconductivity was found in "magic-angle" twisted bilayer graphene. Superconductivity was also found in ABC stacked trilayer graphene and other systems. In this article, we review the unique properties of superconducting states in graphene, experimentally controlling the superconductivity in twisted bilayer graphene, as well as a gate-tunable Mott insulator, and the superconductivity in trilayer graphene. These discoveries have attracted the attention of a large number of physicists. The study of the electronic correlated states in twisted multilayer graphene serves as a smoking gun in recent condensed matter physics.

arXiv commentPublished version in Chinese Physics B. Much more references are added

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Cited by in corpus (5)

• Electric-field-tunable electronic nematic order in twisted double-bilayer graphene
• Mott insulating state and $d+id$ superconductivity in an ABC graphene trilayer
• Wrinkling and crumpling in twisted few and multilayer CVD graphene: High density of edge modes influencing Raman spectra
• Quantifying the charge carrier interaction in metallic twisted graphene superlattices
• Renormalization group approach to the elastic properties of graphene bilayers