Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Abstract

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.

4 pages, 3 figures, Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
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• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

Cited by in corpus (7)

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• The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
• Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces
• Ultrafast electronic line width broadening in the C 1s core level of graphene
• Epigraphene : epitaxial graphene on silicon carbide
• Rubidium intercalation in epitaxial monolayer graphene