activity
20112022
most citedRevealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

86 citations · 168 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2022

Structure and morphology evolution of concave-shaped SiC {0001} surfaces in liquid silicon

Xinming Xing, Takeshi Yoshikawa, Didier Chaussende

Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in pure liquid silicon for investigating the structure and morphology evolution of the SiC surface as a f…

cond-mat.mtrl-sci2016★ 6 cited

Al4SiC4 vibrational properties: Density Functional Theory calculations compared to Raman and Infrared spectroscopy measurements

L. Pedesseau, O. Chaix-Pluchery, M. Modreanu +5

Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of…

cond-mat.mtrl-sci2014★ 86 cited

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Camilla Coletti, Stiven Forti, Alessandro Principi +10

In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…

cond-mat.mes-hall2012★ 10 cited

Epitaxial graphene morphologies probed by weak (anti)-localization

Ather Mahmood, Cécile Naud, Clément Bouvier +6

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities…

cond-mat.mtrl-sci2011★ 66 cited

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Camilla Coletti, Konstantin V. Emtsev, Alexei A. Zakharov +3

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective…