184 citations · 842 across the 12 of their papers we have counts for
12 papers
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Camilla Coletti, Stiven Forti, Alessandro Principi +10
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Sarah Goler, Camilla Coletti, Vincenzo Piazza +8
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon…
Large area quasi-free standing monolayer graphene on 3C-SiC(111)
Camilla Coletti, Konstantin V. Emtsev, Alexei A. Zakharov +3
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective…
Quasiparticle Transformation During a Metal-Insulator Transition in Graphene
Aaron Bostwick, Jessica L. McChesney, Konstantin Emtsev +4
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwit…
Self-consistent analysis of electron-phonon coupling parameters of graphene
Jessica L. McChesney, Aaron Bostwick, Taisuke Ohta +4
We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral in…
Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene
J. A. Robinson, C. P. Puls, N. E. Staley +5
We report results from two-dimensional Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation in Raman peak positio…