Self-doping effects in epitaxially grown graphene
arXiv:0901.1901 · doi:10.1063/1.3028015
Abstract
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.
Published in Applied Physics Letters 93, 243119 (2008)
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- Direct measurement of quantum phases in graphene via photoemission spectroscopy
- The effect of sublattice symmetry breaking on the electronic properties of a doped graphene
- Emergence of Kondo resonance in graphene intercalated with cerium
- Effect of a gap opening on the conductance of graphene superlattices
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