Intercalation of graphene on SiC(0001) via ion-implantation

Abstract

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.

References in corpus (5)

• The electronic properties of graphene
• Atomic Hole Doping of Graphene
• Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
• Evidence for superconductivity in Li-decorated monolayer graphene
• Silicon surface with giant spin-splitting

Cited by in corpus (6)

• Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
• Momentum microscopy of Pb-intercalated graphene on SiC: charge neutrality and electronic structure of interfacial Pb
• Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)
• Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface
• Charge to spin conversion in atomically thin bismuth
• Charge transfer between van der Waals coupled metallic 2D layers