Enhanced Many-Electron Effects on Excited States of Gated Bilayer Graphene
arXiv:1210.6018 · doi:10.1103/PhysRevB.86.205423
Abstract
By employing the first-principles GW-Bethe-Salpeter Equation (BSE) simulation, we obtain, for the first time, the accurate quasiparticle (QP) band gap, optical absorption spectra and their dependence on the gate field of gated bilayer graphene (GBLG). Many-electron effects are shown to be extremely important to understand these excited-state properties; enhanced electron-electron interactions dramatically enlarge the QP band gap; infrared optical absorption spectra are dictated by bright bound excitons. Our results well explain recent experiments and satisfyingly solve the puzzle about the inconsistency between experimentally measured transport and optical band gaps. Moreover, our calculation reveals fine excitonic structures and predicts exotic excitonic effects that have not been observed yet, which can be of interest for optoelectronics applications based on GBLG.
5 pages and 4 figures
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