113 citations · 298 across the 4 of their papers we have counts for
4 papers
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
Bartholomaeus N. Szafranek, Daniel Schall, Martin Otto +2
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for elect…
Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
Bartholomaeus N. Szafranek, Daniel Schall, Martin Otto +2
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes.…
Mobility in Graphene Double Gate Field Effect Transistors
M. C. Lemme, T. J. Echtermeyer, M. Baus +5
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for gr…
A graphene-based electrochemical switch
T. J. Echtermeyer, M. C. Lemme, M. Baus +3
Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modifi…