Mobility in Graphene Double Gate Field Effect Transistors
arXiv:0809.5099 · doi:10.1016/j.sse.2007.10.054
Abstract
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.
arXiv comment7 pages, 9 figures
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- Performance limits projection of black phosphorous field-effect transistors
- Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
- Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors
- Charged Impurity Scattering in Graphene Nanostructures
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- A Comparative Study of Substrates Disorder on Mobility in the Graphene Nanoribbon: Charged Impurity, Surface Optical Phonon, Surface Roughness