1.1k citations · 1.4k across the 4 of their papers we have counts for
4 papers
Mobility in Graphene Double Gate Field Effect Transistors
M. C. Lemme, T. J. Echtermeyer, M. Baus +5
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for gr…
Non-volatile switching in graphene field effect devices
T. J. Echtermeyer, M. C. Lemme, M. Baus +3
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to e…
A graphene-based electrochemical switch
T. J. Echtermeyer, M. C. Lemme, M. Baus +3
Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modifi…
A Graphene Field-Effect Device
M. C. Lemme, T. J. Echtermeyer, M. Baus +1
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible…