A Graphene Field-Effect Device
arXiv:cond-mat/0703208 · doi:10.1109/LED.2007.891668
Abstract
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
12 pages, 3 figures
References in corpus (3)
Cited by in corpus (39)
- The electronic properties of graphene
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- A self-consistent theory for graphene transport
- Quantum interference and Klein tunneling in graphene heterojunctions
- Raman Spectroscopy of Graphene Edges
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Raman Fingerprint of Charged Impurities in Graphene
- Rayleigh Imaging of Graphene and Graphene Layers
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Edge-functionalized and substitutional doped graphene nanoribbons: electronic and spin properties
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Epitaxial graphene transistors on SiC substrates
- Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
- Charge Transport in Disordered Graphene-Based Low Dimensional Materials
- Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
- Simulation of Graphene Nanoribbon Field Effect Transistors
- Etching of Graphene Devices with a Helium Ion Beam
- Gate-controlled non-volatile graphene-ferroelectric memory
- Adsorbate-limited conductivity of graphene
- Top-gated graphene field-effect-transistors formed by decomposition of SiC
- Non-volatile switching in graphene field effect devices
- Electronic transport in locally gated graphene nanoconstrictions
- Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
- Energy gaps, magnetism, and electric field effects in bilayer graphene nanoribbons
- Voltage and temperature dependencies of conductivity in gated graphene
- Effect of radiation on transport in graphene
- Transmission through a biased graphene bilayer barrier
- Integrated complementary graphene inverter
- Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
- Density-Functional Theory of Graphene Sheets
- Effect of disorder on a graphene p-n junction
- Ballistic Hot Electron Transport in Graphene
- Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances
- On the possibility of tunable-gap bilayer graphene FET
- Local gating of a graphene Hall bar by graphene side gates
- Departure from the conical dispersion in epitaxial graphene
- Signature of chirality in scanning-probe imaging of charge flow in graphene
- Nonequilibrium-induced metal-superconductor quantum phase transition in graphene
- Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study