A Graphene Field-Effect Device

Abstract

In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

12 pages, 3 figures

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• Electric Field Effect in Atomically Thin Carbon Films
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• Energy Gaps in Graphene Nanoribbons
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