Side-gated transport in FIB-fabricated multilayered graphene nanoribbons
arXiv:0712.2314 · doi:10.1002/smll.200700913
Abstract
In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple model of 1D array of tunnelling junctions.
Revised version: more detailed description of control experiments. 5 pages, 4 figures, submitted to Small (Wiley-VCH). Added supporting information (Figs S1 to S8)
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