Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals

Abstract

Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\mathrm{PtS}{\mathrm{e}}_2$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\mathrm{PtS}{\mathrm{e}}_2$ can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1 to 10 layers $\mathrm{PtS}{\mathrm{e}}_2$ by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films.

arXiv commentDOIs references corrected

References in corpus (10)

• Universal mechanical exfoliation of large-area 2D crystals
• Raman spectroscopy as probe of nanometer-scale strain variations in graphene
• Raman Characterization of Platinum Diselenide Thin Films
• High quality atomically thin PtSe2 films grown by molecular beam epitaxy
• Identifying suitable substrates for high-quality graphene-based heterostructures
• Tuning the Fröhlich exciton-phonon scattering in monolayer MoS2
• Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials
• Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
• High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
• Helicity resolved Raman spectroscopy of mono- and a few-layers thick PtSe${}_2$

Cited by in corpus (1)

• The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions