Valley-engineering mobilities in two-dimensional materials

Abstract

Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven e.g. by electron-phonon interactions) requires to modify the electronic or vibrational properties of the material. Since intervalley scattering critically affects mobilities, a powerful approach to enhance transport performance relies on engineering the valley structure. We show here the power of this strategy using uniaxial strain to lift degeneracies and suppress scattering into entire valleys, dramatically improving performance. This is shown in detail for arsenene, where a 2% strain stops scattering into 4 of the 6 valleys, and leads to a 600% increase in mobility. The mechanism is general and can be applied to many other materials, including in particular the isostructural antimonene and blue phosphorene.

14 pages, 14 figures

References in corpus (28)

• Phonons and related properties of extended systems from density-functional perturbation theory
• Boron nitride substrates for high-quality graphene electronics
• Graphene plasmonics
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Electron-phonon interactions from first principles
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Precision and efficiency in solid-state pseudopotential calculations
• Strain engineering in semiconducting two-dimensional crystals
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Electron and Hole Mobilities in Single-Layer WSe2
• Origin of band gaps in graphene on hexagonal boron nitride
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Black Phosphorus Radio-Frequency Transistors
• Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
• Graphene for terahertz applications
• Valley Magnetoelectricity in Single-Layer MoS2
• Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene
• Epitaxial Synthesis of Blue Phosphorene
• Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
• Spontaneous Strains and Gap in Graphene on Boron Nitride
• Generalized effective mass approach for cubic semiconductor n-MOSFETs on arbitrarily oriented wafers
• Mobility of 2D materials from first principles in an accurate and automated framework
• Strain Engineering of Antimonene by a First-principles Study: Mechanical and Electronic Properties
• Effect of modulations of doping and strain on the electron transport in monolayer MoS_2
• Strain-tunable charge carrier mobility of atomically thin phosphorus allotropes

Cited by in corpus (9)

• Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility
• Developments and applications of the OPTIMADE API for materials discovery, design, and data exchange
• Remote free-carrier screening to boost the mobility of Fröhlich-limited 2D semiconductors
• Strain-induced activation of chiral-phonon emission in monolayer WS${}_2$
• Dissipative Transport and Phonon Scattering Suppression via Valley Engineering in Single-Layer Antimonene and Arsenene Field-Effect Transistors
• Ab-initio Van der Waals electrodynamics: polaritons and electron scattering from plasmons and phonons in BN-capped graphene
• Electron-hole dichotomy and enhancement of thermoelectric power factor by electron-hole-asymmetric relaxation time: a model study on a two-valley system with strong intervalley scattering
• Transconductance as a Probe of Valley Thermodynamics in Multilayer WSe${}_2$
• Valley-dependent electron-phonon scattering in thermoelectric semimetal Ta${}_2$PdSe${}_6$