Direction dependent switching of carrier-type enabled by Fermi surface geometry

Abstract

While charge carriers can typically be designated as either electron- or hole- type, depending on the sign of the Hall coefficient, some materials defy this straightforward classification. Here we find that LaRh${}_6$Ge${}_4$ goes beyond this dichotomy, where the Hall resistivity is electron-like for magnetic fields along the $c$-axis but hole-like in the basal plane. Together with first-principles calculations, we show that this direction-dependent switching of the carrier type arises within a single band, where the special geometry leads to charge carriers on the same Fermi surface orbiting as electrons along some directions, but holes along others. The relationship between the Fermi surface geometry and occurrence of a Hall sign reversal is further generalized by considering tight-binding model calculations, which show that this type of Fermi surface corresponds to a more robust means of realizing this phenomenon, suggesting an important route for tailoring direction dependent properties for advanced electronic device applications.

arXiv comment7 pages, 5 figures

References in corpus (16)

• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Anomalous Hall effect
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Topological Hall effect in the A-phase of MnSi
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Spectral and Fermi surface properties from Wannier interpolation
• Change of carrier density at the pseudogap critical point of a cuprate superconductor
• Full orbital calculation scheme for materials with strongly correlated electrons
• Quantum oscillations, thermoelectric coefficients and the Fermi surface of semi-metallic WTe2
• Strange metal behavior in a pure ferromagnetic Kondo lattice
• Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition
• Hall effect in the extremely large magnetoresistance semimetal WTe${}_2$
• Anisotropic resistivity and Hall effect in MgB2 single crystals
• Origin of the Extremely Large Magnetoresistance in the Semimetal YSb
• WannSymm: A symmetry analysis code for Wannier orbitals
• Localized 4f-electrons in the quantum critical heavy fermion ferromagnet CeRh${}_6$Ge${}_4$

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• Signatures of two ferromagnetic states and goniopolarity in LaCrGe3 in the Hall effect
• Magnetic and electric properties of the metallic kagome antiferromagnet CrRhAs