1.5k citations · 6.2k across the 21 of their papers we have counts for
Showing 2013Show all
3 papers · 1 filter
cond-mat.mes-hall2013★ 255 cited
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Han Liu, Mengwei Si, Yexin Deng +6
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On…
cond-mat.mtrl-sci2013★ 255 cited
Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
Yuchen Du, Han Liu, Adam T. Neal +2
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction…
cond-mat.mes-hall2013★ 223 cited
Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
Han Liu, Mengwei Si, Sina Najmaei +5
Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectroni…