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Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Yuchen Du, Lingming Yang, Hong Zhou +1
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an init…
Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
Yuchen Du, Jesse Maassen, Wangran Wu +3
The Poisson's ratio of a material characterizes its response to uniaxial strain. Materials normally possess a positive Poisson's ratio - they contract laterally when stretched, and…
Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Gang Qiu, Yuchen Du, Adam Charnas +7
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is…
Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
Xi Luo, Kuanchen Xiong, James C. M. Hwang +2
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation…
Weak Localization in Few-Layer Black Phosphorus
Yuchen Du, Adam T. Neal, Hong Zhou +1
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mo…