activity
20082018
most citedBlack Phosphorus Mid-Infrared Photodetectors with High Gain

791 citations · 1.8k across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2018★ 44 cited

Intrinsically ultrastrong plasmon-exciton interactions in crystallized films of carbon nanotubes

Po-Hsun Ho, Damon B. Farmer, George S. Tulevski +6

In cavity quantum electrodynamics, optical emitters that are strongly coupled to cavities give rise to polaritons with characteristics of both the emitters and the cavity excitatio…

physics.app-ph2017★ 3 cited

Atomically-thin Femtojoule Filamentary Memristor

Huan Zhao, Zhipeng Dong, He Tian +12

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of…

physics.optics2017★ 54 cited

Strong and broadly tunable plasmon resonances in thick films of aligned carbon nanotubes

Kuan-Chang Chiu, Abram L. Falk, Po-Hsun Ho +5

Low-dimensional plasmonic materials can function as high quality terahertz and infrared antennas at deep subwavelength scales. Despite these antennas' strong coupling to electromag…

physics.chem-ph2017★ 2 cited

Photo-Chemically Directed Self-Assembly of Carbon Nanotubes on Surfaces

Zhaoying Hu, James B. Hannon, Hongsik Park +4

Transistors incorporating single-wall carbon nanotubes (CNTs) as the channel material are used in a variety of electronics applications. However, a competitive CNT-based technology…

physics.optics2017★ 51 cited

Coherent plasmon and phonon-plasmon resonances in carbon nanotubes

Abram L. Falk, Kuan-Chang Chiu, Damon B. Farmer +5

Carbon nanotubes provide a rare access point into the plasmon physics of one-dimensional electronic systems. By assembling purified nanotubes into uniformly sized arrays, we show t…

cond-mat.mes-hall2016★ 71 cited

Coupling-Enhanced Broadband Mid-Infrared Light Absorption in Graphene Plasmonic Nanostructures

Bingchen Deng, Qiushi Guo, Cheng Li +6

Plasmons in graphene nanostructures show great promise for mid-infrared applications ranging from a few to tens of microns. However, mid-infrared plasmonic resonances in graphene n…

cond-mat.mtrl-sci2016★ 791 cited

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Qiushi Guo, Andreas Pospischil, Maruf Bhuiyan +11

Recently, black phosphorus (BP) has joined the two dimensional material family as a promising candidate for photonic applications, due to its moderate bandgap, high carrier mobilit…

cond-mat.mtrl-sci2015★ 16 cited

Power dissipation and electrical breakdown in black phosphorus

Michael Engel, Mathias Steiner, Shu-Jen Han +1

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spe…

cond-mat.mes-hall2014★ 328 cited

Black Phosphorus Radio-Frequency Transistors

Han Wang, Xiaomu Wang, Fengnian Xia +6

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoe…

cond-mat.mes-hall2011

High-frequency performance of graphene field effect transistors with saturating IV-characteristics

I. Meric, C. R. Dean, S. -J. Han +4

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax val…

cond-mat.mes-hall2010★ 48 cited

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer +9

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-la…

cond-mat.mtrl-sci2010★ 98 cited

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…

cond-mat.mtrl-sci2008★ 291 cited

Nanoscale control of exchange bias with BiFeO3 thin films

Lane W. Martin, Ying-Hao Chu, Mikel B. Holcomb +5

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of in…