Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe-NbSe monolayers
arXiv:2405.17231 · doi:10.1021/acsnano.4c10302
Abstract
Van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe -- 1H-NbSe lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure using scanning tunnelling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the one-dimensional interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explore the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials.
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