Inelastic vibrational signals in electron transport across graphene nanoconstrictions
arXiv:1604.02664 · doi:10.1103/PhysRevB.93.245415
Abstract
We present calculations of the inelastic vibrational signals in the electrical current through a graphene nanoconstriction. We find that the inelastic signals are only present when the Fermi-level position is tuned to electron transmission resonances, thus, providing a fingerprint which can link an electron transmission resonance to originate from the nanoconstriction. The calculations are based on a novel first-principles method which includes the phonon broadening due to coupling with phonons in the electrodes. We find that the signals are modified due to the strong coupling to the electrodes, however, still remain as robust fingerprints of the vibrations in the nanoconstriction. We investigate the effect of including the full self-consistent potential drop due to finite bias and gate doping on the calculations and find this to be of minor importance.
References in corpus (33)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Density functional method for nonequilibrium electron transport
- Electronic transport in two dimensional graphene
- On-surface synthesis of graphene nanoribbons with zigzag edge topology
- Electronic States of Graphene Nanoribbons
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Molecular Transport Junctions: Vibrational Effects
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
- Inelastic transport theory from first-principles: methodology and applications for nanoscale devices
- Inelastic scattering and local heating in atomic gold wires
- Electron and optical phonon temperatures in electrically biased graphene
- Modeling inelastic phonon scattering in atomic- and molecular-wire junctions
- Unified description of inelastic propensity rules for electron transport through nanoscale junctions
- Electron-vibration interaction in transport through atomic gold wires
- Quantized conductance of a suspended graphene nanoconstriction
- Thermoelectric properties of finite graphene antidot lattices
- Hot Phonons in an Electrically Biased Graphene Constriction
- Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
- Coherent electronic transport through graphene constrictions: sub-wavelength regime and optical analogies
- Efficient calculation of inelastic vibration signals in electron transport: Beyond the wide-band approximation
- Manipulating the voltage drop in graphene nanojunctions using a gate potential
- Graphene antidot lattice waveguides
- Electron interference in ballistic graphene nanoconstrictions
- Lattice Expansion in Seamless Bi layer Graphene Constrictions at High Bias
- Unravelling the role of inelastic tunneling into pristine and defected graphene
- Phonon excitation and instabilities in biased graphene nanoconstrictions
- Conductance quantization in graphene nanoconstrictions with mesoscopically smooth but atomically stepped boundaries
- On the identification of pristine and defected graphene nanoribbons by phonon signatures in the electron transport characteristics
- Scattering Theory Approach to Inelastic Transport in Nanoscale Systems
Cited by in corpus (6)
- First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost
- Hypergeometric resummation of self-consistent sunset diagrams for electron-boson quantum many-body systems out of equilibrium
- Resonance-enhanced vibrational spectroscopy of molecules on a superconductor
- Current-induced atomic forces in gated graphene nanoconstrictions
- Stability of destructive interference antiresonances in electron transport through graphene nanostructures
- Conformation Controllable Inelastic Charge Transport and Shot Noise Behavior in Metal-String Single Molecular Devices