Charge carrier mobility degradation in graphene sheet under induced strain
arXiv:1008.4425
Abstract
Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb.
arXiv comment9 pages, 5 figures Version 2: Corrected Typos
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