High performance integrated graphene electro-optic modulator at cryogenic temperature

Abstract

High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.

arXiv comment10 pages, 4 figures, Supplementary Information

References in corpus (9)

• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Temperature dependent transport in suspended graphene
• Substrate limited electron dynamics in graphene
• Snapshots of non-equilibrium Dirac carrier distributions in graphene
• Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
• Silicon CMOS architecture for a spin-based quantum computer
• Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
• The infrared conductivity of graphene
• Ultrahigh Doping of Graphene Using Flame-Deposited MoO3