Gap modification of atomically thin boron nitride by phonon mediated interactions

Abstract

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ=1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

References in corpus (6)

• The electronic properties of graphene
• Two Dimensional Atomic Crystals
• Substrate-induced band gap opening in epitaxial graphene
• Electronic States of Graphene Nanoribbons
• Substrate limited electron dynamics in graphene
• Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description