Low-frequency critical current noise in graphene Josephson junctions in the open-circuit gate voltage limit

Abstract

We investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $T^{-3}$, strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.

References in corpus (6)

• The electronic properties of graphene
• Boron nitride substrates for high-quality graphene electronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Josephson effect in ballistic graphene
• Effects of low-frequency noise cross-correlations in coupled superconducting qubits
• Charge carrier density noise in graphene: effect of localized/delocalized traps

Cited by in corpus (1)

• Andreev spin-noise detector