Absorptive pinhole collimators for ballistic Dirac fermions in graphene
arXiv:1611.05155 · doi:10.1038/ncomms15418
Abstract
Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semimetal that hosts unique chiral electron-optical effects due to its honeycomb crystalline lattice. However, this chiral transport prevents simple use of electrostatic gates to define electron-optical devices in graphene. Here, we present a method of creating highly-collimated electron beams in graphene based on collinear pairs of slits, with absorptive sidewalls between the slits. By this method, we achieve beams with angular width 18 degrees or narrower, and transmission matching semiclassical predictions.
24 pages, 9 figures
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- Spintronic signatures of Klein tunneling in topological insulators
- Electron collimation at van der Waals domain walls in bilayer graphene
- Cryogen-free scanning gate microscope for the characterization of Si/SiGe quantum devices at milli-Kelvin temperatures
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- Valley separation via trigonal warping
- Breakdown of the Law of Reflection at a Disordered Graphene Edge
- Sagnac Electron Interference as a Probe of Electronic Structure
- Complete Spin and Valley Polarization by Total External Reflection from Potential Barriers in Bilayer Graphene and Monolayer Transition Metal Dichalcogenides