306 citations · 1.8k across the 19 of their papers we have counts for
20 papers
Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe
Kang Lai, Sailong Ju, Hongen Zhu +11
Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from…
Van der Waals Ferromagnetic Josephson Junctions
Linfeng Ai, Enze Zhang, Ce Huang +11
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetis…
In-plane magnetic domains and Néel-like domain walls in thin flakes of the room temperature CrTe van der Waals ferromagnet
Anike Purbawati, Johann Coraux, Jan Vogel +17
The recent discovery of magnetic van der Waals materials has triggered a wealth of investigations in materials science, and now offers genuinely new prospects for both fundamental…
Room temperature 2D ferromagnetism in few-layered 1-CrTe
Xingdan Sun, Wanying Li, Xiao Wang +21
Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintroni…
Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
Xiao Wang, Jian Tang, Xiuxin Xia +25
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in…
Gate tunable giant anisotropic resistance in ultra-thin GaTe
Hanwen Wang, Mao-Lin Chen, Mengjian Zhu +19
In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pro…
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS transistor
Xiaoxi Li, Zhiqiang Fan, Peizhi Liu +10
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. H…
High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride
Hadi Arjmandi-Tash, Dipankar Kalita, Zheng Han +9
We present a transfer-free preparation method for graphene on hexagonal boron nitride (h-BN) crystals by chemical vapor deposition of graphene via a catalytic proximity effect, i.e…
Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe
W. L. Liu, M. L. Chen, X. X. Li +15
Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essentia…
Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices
Katrin Zimmermann, Anna Jordan, Frédéric Gay +6
Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmis…
Electron optics with ballistic graphene junctions
Shaowen Chen, Zheng Han, Mirza M. Elahi +9
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equ…
Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
Yong-Tao Cui, Bo Wen, Eric Y. Ma +8
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the…
Fractional fractal quantum Hall effect in graphene superlattices
Lei Wang, Yuanda Gao, Bo Wen +6
The Hofstadter energy spectrum provides a uniquely tunable system to study emergent topological order in the regime of strong interactions. Previous experiments, however, have been…
Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections
S. Linas, Y. Magnin, B. Poinsot +12
Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene . Here we report de…
Phonon-Induced Transparency in Functionalized Single Layer Graphene
Bruno Rousseau, François Lapointe, Minh Nguyen +8
Herein, intervalley scattering is exploited to account for anomalous antiresonances in the infrared spectra of doped and disordered single layer graphene. We present infrared spect…
Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates
Antoine Reserbat-Plantey, Dipankar Kalita, Laurence Ferlazzo +11
We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an orde…
Collapse of superconductivity in a hybrid tin-graphene Josephson junction array
Zheng Han, Adrien Allain, Hadi Arjmandi-Tash +4
When a Josephson junction array is built with hybrid superconductor/metal/superconductor junctions, a quantum phase transition from a superconducting to a two-dimensional (2D) meta…
Electrical switch to the resonant magneto-phonon effect in graphene
P. Leszczynski, Z. Han, A. A. L. Nicolet +7
We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around …
Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper
Zheng Han, Amina Kimouche, Adrien Allain +7
By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of fe…
Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids
Adrien Allain, Zheng Han, Vincent Bouchiat
Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene comp…