Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact
arXiv:2207.10968 · doi:10.1002/advs.202202222
Abstract
Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, we demonstrate that a write energy can be reduced to about ~53.7 fJ in a cell with ~3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ~1 nm2. It is found that the cycle endurance exhibits an obvious dependence on the bias polarity in the cell with structure asymmetry. If a positive bias was applied to graphene electrode, the endurance can be extended at least one order longer than the case with reversal of polarity. The work represents a great technological advance for the low power PCRAM and could benefit for in-memory computing in future.
arXiv comment14 pages, 4 figures
References in corpus (10)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Neuromorphic computing with multi-memristive synapses
- Breakdown Current Density of Graphene Nano Ribbons
- Temporal correlation detection using computational phase-change memory
- Metal Oxide Resistive Memory using Graphene Edge Electrode
- Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
- High thermal conductivity of hexagonal boron nitride laminates
- Nanoscale Phase Change Memory with Graphene Ribbon Electrodes
- Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact